2018 High Quality Aluminium Based Metal Core PCB

Modello numero.
Aluminium PCB-4

Materiale
Alluminio

Board Thickness
0.8mm,1.0mm,1.2mm,1.6mm,2.0mm,2.2mm

Thermal Conductivity
1.0W/M.K,1.5W/M.K,2.0W/M.K,3.0W/M.K,4.0W/M.K

Ccl Brand
Jh,Ccaf.etc

Sample Date
3-5giorni

Pacchetto di trasporto
Vacuum Packing

Specifica
SGS UL ISO

Marchio
ZAPON

Origine
Cina

Codice HS
85340090

Capacità produttiva
50.000sqm/Month

Descrizione

Descrizione del prodotto:
Aluminum base copper-clad laminate have excellent flame retardant, high mechanical strength, dimensional stability etc. Especially it has very good heat sink, electromagnetic shielding and solder float.
It’s widely used for the modifier and sparker on fire for motorcycle and mobile, power LED, sound box, power supply module and acoustics shielding system etc.
Note: We specially produces Metal Base Copper-Clad Laminates, and our products have been compiled series with all complete specifications.
The tapy and specification of Aluminum based Laminates CCAF-01, CCAF-04-UN, CCAF-05eccetera. And 0.8mm, 1.0mm, 1.5mm, 2.0mm, eccetera.
Thickness of the copper: 18uno, 35uno, 70uno, 105uno.
Base size: 500mm ×, 600mm (20″×, 24″); 600mm ×, 1060mm (24″×, 42″)
CCAF-01 Aluminum-base copper-clad laminate
The test base: CCAF-01 the high heat dissipation Aluminum-base copper-clad laminate
Thickness of the copper: 35uno
Thickness of the diclectric: 70uno
Thickness of the aluminum-base: 1.5mm
Technique parameter:

Test item Technology request Unit Test result
1 Peel Strength UN ≥ 1.8 N/mm 2
After thermal stress (260ordm;C) ≥ 1.8 N/mm 1.8
2 Blister test AfterThermal stress (260ºC, 2min ) No delaminating / Ok
3 Flammability(UN) FV-O / FV-O
4 Thermal resistance ≤ 2.0 ordm;C /W 1
5 Surface Resistivity UN ≥ 1 × 10 5 M Ω 5 × 10 7
Constant humidity treatment ≥ 1 × 10 5 M Ω 2 × 10 6
(90%,3 5 ordm;C,96h)
6 Volume Resistivity UN ≥ 1 × 10 6 M Ω· m 4 × 10 8
Constant humidity treatment ≥ 1 × 10 6 M Ω· m 5 × 10 7
(90%,3 5ordm;C ,96h)
7 Dielectric Breakdown ( DC ) ≥ 28.5 Kv/mm 31
8 Dielectric constant (1MHz ) ≤ 4.4 / 4.2
(40 ordm;C,93% , 96h )
9 Dielectric dissipation factor (1MHz ) ≤ 0.03 / 0.02
(40 ordm;C, 93% ,96h )