In5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky Diode

Modell Nr.
schottky rectifier

Luminous Intensity
Standard

Farbe
Schwarz

Structure
Planar

Material
Silicon

Transportpaket
by Sea. Verpackung

Spezifikation
DO-201AD / D0-27

Warenzeichen
ZG

Herkunft
Anhui, Province, China

HS-Code
8541100000

Beschreibung

Produktbeschreibung

In5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky Diode

Detaillierte Fotos

In5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky DiodeIn5408 1000V Do-27 Axial Diode 3A General Purpose Rectifier Diode 1n5408 Shottky Diode

Symbols 1N
5400
1N
5401
1N
5402
1N
5403
1N
5404
1N
5405
1N
5406
1N
5407
1N
5408
Units
Maximum repetitive peak reverse voltage vRMM 50 100 200 300 400 500 600 800 1000 Volts
Maximum RMS voltage vRMS 35 70 140 210 280 350 420 560 700 Volts
Maximum DC blocking voltage vDC 50 100 200 300 400 500 600 800 1000 Volts
Maximum Average Forward Rectified Current @TA=55 °C I(AV) 3.0 Amps
Peak Forward Surge Current
8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC
IFSM 200.0 Amps
Method)
Maximum forward voltage at 3.0A DC
vF 1.0 Volts
Maximum DC reverse current TJ=25°C at rated DC blocking voltage TJ=100°C IR 5.0
50
μA
Typical junction capacitance (Note 1) CJ 50.0 35.0 pF
Typical thermal resistance (Note 2) RθJA 15.0 ºC/W
Operating Temperature Range TJ -55 Zu +150 °C
Storage Temperature Range TSTG -55 Zu +150 °C

Anhui Zhongxin Semiconductor Co., GmbH. was established in 2010 and covers an area of 20000 square meters, which is located in Anhui Province, near Shanghai. Our company is focus on the development and production of diode, rectifier diode, mosfet, schottky diode, fast recovery diode, bridge rectifier, silicon wafer, etc. Our mission is to be the most valuable semiconductor supplier beside you. Welcome to contact us for future business relationships and mutual success.

FAQ:

1, Are you Manufacturer or trading company?
We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with prompt service, we guarantee that we will reply to our customers within 1-12H once we receive the inquiry, we will do the utmost to help to cut down your cost.
AND ZG WILL LIKE TO ASSURE ALL THE CUSTOMERS THAT WHATEVER IS WRITTEN ON THE LABEL OF THE PRODUCT IS 100% TRUE

2. May I have some samples for testing?
Jawohl, OF COURSE. We offer free samples for our customers and they only need to pay the freight for samples. If you have order with us, we will deduct the freight from your first order.

3. What about the delivery ?
Usually the lead time is about 1-3 weeks after receiving payment. For many normal parts, we have the quantity in stock and we have the system to ensure the delivery will be on time.

4. What about the payment terms ?
Order amount is less than $10000: 80% Advance,und 20% before shipment.
Order amount is between $10000 und $20000: 50% Advance and 50% before shipment.
Order amount is more than $20000: 30% Advance and 70% before shipment.

5. What about the shipment terms ?
FOB Shanghai by sea;